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Thursday 7th December 2017
Gate dielectric process improves power GaN reliability
Thursday 7th December 2017
Fujitsu Increasing GaN HEMT Performance
Wednesday 6th December 2017
ESA project develops 6x6mm GaN transceiver
Wednesday 6th December 2017
Calibration instrument reduces cost of calibrating power meters
Wednesday 6th December 2017
Ground-breaking image sensor enables next generation ADAS solution
Wednesday 6th December 2017
Automotive-grade regulators from Diodes deliver 5V, 8V, or 12V outputs
Wednesday 6th December 2017
Samsung starts mass production of 2nd generation 10nm FinFET process technology
Wednesday 6th December 2017
New Gate Drivers From Power Integrations Deliver Up to 5 A
Wednesday 6th December 2017
Mitsubishi expands lineup of integrated 400V AC-output station inverter
Wednesday 6th December 2017
Mitsubishi and the University of Tokyo quantify factors for reducing SiC power resistance
Wednesday 6th December 2017
US researchers make flexible GaN chips
Wednesday 6th December 2017
Vincotech announce new sixpack modules
Wednesday 6th December 2017
Dialog extend battery life for “always-on†connected applications
Wednesday 6th December 2017
New CD coating enables manufacturers to operate at higher voltages
Wednesday 6th December 2017
Global partnership utilises innovative materials for sustainable energy storage
Tuesday 5th December 2017
How to cut SiC resistance by two thirds
Tuesday 5th December 2017
Good and Bad EV and Off Grid Forecasting
Tuesday 5th December 2017
Supercluster to ‘power’ renewables across Ireland and Scotland
Tuesday 5th December 2017
Prosumers drive increasing demand for smarter solar building solutions
Monday 4th December 2017
High-End Inertial Sensor Market on Growth Trajectory
Monday 4th December 2017
Lasertec announces GaN Wafer Inspection tool
Friday 1st December 2017
Navitas to bring GaN chips to CES 2018
Friday 1st December 2017
Rohm SiC Power Modules drive Venturi racing team
Tuesday 28th November 2017
UMS GaN HEMT process qualified for space
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