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Lab News

News

Monday 9th March 2026

Electric field tunes vibrations to ease heat transfer

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Wednesday 4th March 2026

USTC team develops GaN/diamond CMOS power circuit

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Monday 23rd February 2026

Improving MBE for GaN power devices

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Thursday 18th December 2025

Platinum: A promising contact for p-type SiC

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Tuesday 16th December 2025

Breaking through the 10 kV barrier

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Tuesday 18th November 2025

GaN: Reducing the on-resistance of GaN p-n diodes

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Monday 17th November 2025

Two-step anneal aids SiC interfaces

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Wednesday 22nd October 2025

US researchers make 'game-changing' boron arsenide discovery

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Wednesday 22nd October 2025

FBH develops 200 MHz GaN buck converter module

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Wednesday 17th September 2025

Si-doped AlN films for Schottky applications

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Thursday 11th September 2025

NREL team constructs record-beating SiC module

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Wednesday 3rd September 2025

Novel annealing process improves SiC devices

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Wednesday 3rd September 2025

Scientists make first gallium oxide pn diodes

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Saturday 16th August 2025

Scaling quartz-free HVPE of GaN-on-GaN epiwafers

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Tuesday 12th August 2025

Pulsed MOCVD promises to improve AlN-based power devices

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Tuesday 5th August 2025

USTC team develops ultrafast junction temperature mapping of GaN PiN diode

Tuesday 29th July 2025

Scaling quartz-free HVPE of GaN-on-GaN epiwafers

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Monday 14th July 2025

Heat-conductive plastic could help cool power chips

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Thursday 3rd July 2025

Understanding the impact of radiation on SiC devices for space

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Monday 30th June 2025

A GaN-on-silicon foundation for Ga₂O₃ FETs

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Tuesday 17th June 2025

Vertical GaN diode shows resistance to proton irradiation

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Thursday 12th June 2025

Debut for vertical rutile GeO₂ Schottky barrier diode

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Tuesday 27th May 2025

Refining diamond film fabrication

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Thursday 15th May 2025

Pulsed MOCVD improves n-type AlN

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