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News

News

Wednesday 22nd January 2025

Turbocharging the GaN MOSFET with a HfO₂ gate

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Wednesday 22nd January 2025

Wolfspeed launches Gen 4 SiC MOSFET technology

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Wednesday 22nd January 2025

Element Six unveils Cu-diamond composite

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Tuesday 21st January 2025

SemiQ launches hi-rel 1700V SiC MOSFETs

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Tuesday 21st January 2025

Step-down DC-DCs offer lowest quiescent current

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Monday 20th January 2025

Farnell to stock tiny DC/DC regulator

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Thursday 16th January 2025

Polar Semi licenses Tower's BCD tech

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Thursday 16th January 2025

Researchers develop tech for future fast-charging stations

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Thursday 16th January 2025

Vermont GaN Tech Hub awarded nearly $24M

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Thursday 16th January 2025

Onsemi completes buy-out of Qorvo SiC JFET business

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Wednesday 15th January 2025

Boosting AlN-on-AlN Schottky barrier diode performance

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Wednesday 15th January 2025

Infineon expands MOTIX family

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Wednesday 15th January 2025

EPC adds new reference design for motor drives

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Tuesday 14th January 2025

Renesas REXFET-1 process means better MOSFETs

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Tuesday 14th January 2025

Mitsubishi to sample latest 1.2kV IGBT module

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Monday 13th January 2025

Indichip Semis to build $1.4b SiC fab

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Wednesday 8th January 2025

Na‑flux method improves GaN device performance

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Tuesday 7th January 2025

Nexperia adds to energy harvesting range

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Tuesday 7th January 2025

US ITC says Innoscience infringed EPC GaN patent

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Tuesday 31st December 2024

US Government to probe Chinese chip trade practices

News

Tuesday 31st December 2024

EPC Space achieves JANS MIL-PRF-19500 certification

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Monday 23rd December 2024

Mitsubishi to ship samples of new HVIGBT modules

News

Thursday 19th December 2024

Power Integrations' switcher targets 800V applications

News

Wednesday 18th December 2024

Bosch gets $225m CHIPs funding for US SiC fab