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Technical Insights
Wednesday 19th April 2023
Multi-dimensional power devices
Wednesday 19th April 2023
Controlling threshold voltage instabilities in SiC MOSFETs
Wednesday 19th April 2023
GaN diodes with uniform, robust avalanche
Thursday 6th April 2023
GaN diodes with uniform, robust avalanche
Thursday 6th April 2023
Bidirectional GaN switches are disrupting power management
Wednesday 29th March 2023
Virtualisation: a key enabler of the future power grid
Friday 20th January 2023
Unconventional electroplating techniques can improve performance
Wednesday 18th January 2023
Key criteria for Power MOSFETs in harsh linear mode applications
Monday 16th January 2023
Swappable batteries set to revolutionise the power industry
Tuesday 8th November 2022
The glorious gate oxide
Thursday 3rd November 2022
Cubic SiC: Tomorrow’s champion for power electronics?
Thursday 13th October 2022
Full speed ahead for SiC
Wednesday 12th October 2022
Gearing up for electric vehicles with Soitec’s SmartSiC substrates
Wednesday 12th October 2022
Breaking new ground with the hybrid transistor
Wednesday 12th October 2022
The allure of cubic SiC
Thursday 15th September 2022
Optimized LoRa sensor network power solutions can lower IoT Opex
Wednesday 14th September 2022
Superjunction sparks super devices in silicon carbide
Tuesday 1st February 2022
GaN RF HEMTs: Powering ahead with native substrates
Monday 31st January 2022
Are GaN RF devices reliable enough for space missions?
Monday 18th October 2021
Targeting medium-voltage power electronics with vertical GaN devices
Monday 1st March 2021
Power Rectifiers: High-voltage GaN trumps SiC
Wednesday 17th February 2021
Disrupting the tubes market with high-voltage GaN HEMTs
Thursday 18th April 2019
Addressing production of SiC super-junction MOSFETs
Monday 25th December 2017
Removing GaN from GaN
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