Joint US-Taiwan initiative to scale the future of SiC
Purdue University in the US has signed a five year partnership with Taiwanese company GeChi Compound Semiconductor (GCCS), a specialist in SiC crystal growth, to accelerate the commercialisation of SiC.
The collaboration targets the critical thermal, power and 6G bottlenecks currently constraining the next generation of high-compute infrastructure. Joint research will focus on isolating crystal defects and optimising SiC material growth to accelerate the transition to high-yield 8-inch and 12-inch wafer platforms.
GCCS will serve as a provider of semiconductor materials and Purdue as a hub for the technology. It’s the first MOU between Purdue and Taiwan-based GCCS.
“With this agreement, Purdue and GCCS are leveraging research strengths at the academic and industry levels,” said Dan DeLaurentis, executive vice president for research. “It continues Purdue’s position as a leader in the latest semiconductor research.”
“This partnership represents a profound strategic alignment between GeChi Compound Semiconductor and Purdue University,” commented Kuan-Ming Hsiung,board chairman.
Adding: “By combining our manufacturing scale with America’s leading academic institution, we are taking decisive action to secure the domestic supply chain for SiC. This collaboration is not merely about advancing materials; it is about establishing the resilient, high-yield manufacturing capacity within the United States that is absolutely essential for national tech security and the future of global critical infrastructure.”
