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Lab News

News

Monday 14th July 2025

Heat-conductive plastic could help cool power chips

News

Thursday 3rd July 2025

Understanding the impact of radiation on SiC devices for space

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Monday 30th June 2025

A GaN-on-silicon foundation for Ga₂O₃ FETs

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Tuesday 17th June 2025

Vertical GaN diode shows resistance to proton irradiation

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Thursday 12th June 2025

Debut for vertical rutile GeO₂ Schottky barrier diode

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Tuesday 27th May 2025

Refining diamond film fabrication

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Thursday 15th May 2025

Pulsed MOCVD improves n-type AlN

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Monday 28th April 2025

NCT achieves record Ga₂O₃ performance

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Thursday 24th April 2025

Scientists identify new material for wearable devices

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Monday 14th April 2025

'Fuse' for the future Grid

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Tuesday 1st April 2025

WHU-USTC team demo novel GaN chip temperature monitoring

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Tuesday 25th March 2025

Boosting the blocking voltage of birectional HEMTs

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Tuesday 18th March 2025

NREL team advances substrate engineering

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Monday 3rd March 2025

High inversion channel mobility in 1.4 kV vertical GaN MIS-FET

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Wednesday 19th February 2025

Korean team develops method to evaluate SiC chips for space

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Monday 10th February 2025

A debut for the native AlN transistor

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Monday 3rd February 2025

SiC MOSFETs: Understanding the benefits of plasma nitridation

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Thursday 30th January 2025

UK team leads diamond-FET breakthrough

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Wednesday 22nd January 2025

Transforming the current density of AlN Schottky barrier diodes

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Wednesday 22nd January 2025

Turbocharging the GaN MOSFET with a HfO₂ gate

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Wednesday 15th January 2025

Boosting AlN-on-AlN Schottky barrier diode performance

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Wednesday 8th January 2025

Na‑flux method improves GaN device performance

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Tuesday 17th December 2024

Vertical GaN diode offers superior surge current capability

News

Wednesday 23rd October 2024

US team develop new thermal interface material

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