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Lab News

News

Monday 28th April 2025

NCT achieves record Ga₂O₃ performance

News

Thursday 24th April 2025

Scientists identify new material for wearable devices

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Monday 14th April 2025

'Fuse' for the future Grid

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Tuesday 1st April 2025

WHU-USTC team demo novel GaN chip temperature monitoring

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Tuesday 25th March 2025

Boosting the blocking voltage of birectional HEMTs

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Tuesday 18th March 2025

NREL team advances substrate engineering

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Monday 3rd March 2025

High inversion channel mobility in 1.4 kV vertical GaN MIS-FET

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Wednesday 19th February 2025

Korean team develops method to evaluate SiC chips for space

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Monday 10th February 2025

A debut for the native AlN transistor

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Monday 3rd February 2025

SiC MOSFETs: Understanding the benefits of plasma nitridation

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Thursday 30th January 2025

UK team leads diamond-FET breakthrough

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Wednesday 22nd January 2025

Transforming the current density of AlN Schottky barrier diodes

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Wednesday 22nd January 2025

Turbocharging the GaN MOSFET with a HfO₂ gate

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Wednesday 15th January 2025

Boosting AlN-on-AlN Schottky barrier diode performance

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Wednesday 8th January 2025

Na‑flux method improves GaN device performance

News

Tuesday 17th December 2024

Vertical GaN diode offers superior surge current capability

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Wednesday 23rd October 2024

US team develop new thermal interface material

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Tuesday 10th September 2024

Enhancing mobility with mist CVD

News

Tuesday 16th July 2024

US team discovers 'hidden carrier' cooling in III-nitrides

News

Wednesday 26th June 2024

Ga₂O₃: Improving the gate dielectric

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Tuesday 25th June 2024

Scientists test GaN chips inside nuclear reactor

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Thursday 23rd May 2024

Turning up the heat on GaN

News

Monday 13th May 2024

Deepening the understanding of post-trench restoration

News

Tuesday 30th April 2024

Enhancing β-Ga₂O₃ diodes with oxygen annealing

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