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Technical Insights

News

Tuesday 8th November 2022

The glorious gate oxide

News

Thursday 3rd November 2022

Cubic SiC: Tomorrow’s champion for power electronics?

News

Thursday 13th October 2022

Full speed ahead for SiC

News

Wednesday 12th October 2022

Gearing up for electric vehicles with Soitec’s SmartSiC substrates

News

Wednesday 12th October 2022

Breaking new ground with the hybrid transistor

News

Wednesday 12th October 2022

The allure of cubic SiC

News

Thursday 15th September 2022

Optimized LoRa sensor network power solutions can lower IoT Opex

News

Wednesday 14th September 2022

Superjunction sparks super devices in silicon carbide

News

Tuesday 1st February 2022

GaN RF HEMTs: Powering ahead with native substrates

News

Monday 31st January 2022

Are GaN RF devices reliable enough for space missions?

News

Monday 18th October 2021

Targeting medium-voltage power electronics with vertical GaN devices

News

Monday 1st March 2021

Power Rectifiers: High-voltage GaN trumps SiC

News

Wednesday 17th February 2021

Disrupting the tubes market with high-voltage GaN HEMTs

News

Thursday 18th April 2019

Addressing production of SiC super-junction MOSFETs

News

Monday 25th December 2017

Removing GaN from GaN

News

Monday 26th June 2017

Making a debut: The p-type SiC MOSFET

News

Thursday 26th January 2017

EPC opens eGaN FET Applications Centre

News

Thursday 12th January 2017

Toshiba Launches Second Generation SiC Diodes

News

Friday 22nd April 2016

Simplifying power conversion with medium voltage SiC MOSFETs

News

Tuesday 12th April 2016

Heat sinking GaN-on-silicon: the substrate removal challenge

News

Tuesday 22nd March 2016

Perfecting GaN power electronics with vertical devices

News

Monday 8th February 2016

A positive outlook for the SiC substrate

News

Monday 21st December 2015

GaN transistors - Breaking barriers to widespread adoption with silicon substrates

News

Monday 16th November 2015

Slashing the cost of the SIC MOSFET