Vishay 40V MOSFETs reduce noise in motor control circuits
New devices combine high minimum gate-source threshold voltage with Qgd / Qgs ratios of less than 1
Vishay has introduced four new 40V TrenchFET Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package.
Optimised for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Qgd / Qgs ratios of less than 1.
The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Qgd / Qgs ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems.
The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mΩ to 2.5 mΩ at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the new standard-level MOSFETs are available now, with a lead time of 13 weeks.
