SemiQ launches 1200V half-bridge module family
SemiQ, a US developer of SiC solutions, has launched the QSiC Dual3, a family of 1200 V half-bridge MOSFET modules for motor drives in data centre cooling systems, grid converters in energy storage systems, and industrial drivers.
The family enables the creation of power converters with both industry-leading conversion efficiency and power density, according to the company. Additionally, the series includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.
Two of the family’s six devices have an RDSon of just 1 mΩ and a power density of 240 W/in3 from its 62 x 152 mm package.
The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die having been screened using wafer-level gate-oxide burn-in tests exceeding 1,450 V. The modules additionally feature a low junction-to-case thermal resistance and enable a simplified system design with smaller, lighter heatsinks.
“Rising AI-driven power and thermal demands in data centres are pushing the limits of traditional cooling and power systems,” said Timothy Han, president at SemiQ. “With a flexible design and industry-leading power density, the QSiC Dual3 series supports 250 kW liquid chiller applications on both active front ends and compressor drives, reducing size and weight compared to traditional silicon IGBT solutions while delivering the full efficiency of SiC."
The new lineup will be on display at the Applied Power Electronics Conference (APEC), from March 22 to 26 2026.
