Rohm SiC MOSFET adopted in HVDC AI servers
Rohm has announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies.
In these high-power, high-voltage environments, BBUs and CUs (Capacitor Units), which compensate power at the server-rack level, are playing an increasingly important role in protecting systems and massive volumes of data in the event of abnormalities such as power outages or momentary interruptions.
The SCT4013DLL device has been installed in the power supply section of a ±400 V power architecture for AI servers. Fabricated from SiC, the product offers high-temperature tolerance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases as voltages and power density rise.
In next-generation 800 VDC power architectures, the supply voltage delivered to the battery pack inside the BBU is approximately 560 V. For this reason, Rohm’s 750 V rated SiC MOSFETs can also be used in these systems.
